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报道了带门极双层 Si-δ-掺杂 Ga As样品中的二维电子系统 Hall效应的低温测量实验 ,观察到了电子耗尽过程中电子浓度与门电压的奇特、复杂的非线性关系 .根据双电容器 (由两个δ-掺杂二维电子层和一个金属门电极构成 )模型的假设和在双对数坐标中电子迁移率与电子浓度呈线性关系的实验结果 ,解释了这一非线性耗尽现象 .
The low-temperature measurement experiment of the Hall effect of the two-dimensional electron system with a gate double-layer Si-δ-doped GaAs was reported. The strange and complicated non-linear relationship between the electron concentration and the gate voltage was observed during the electron depletion. Based on the assumption of a model of a double capacitor (consisting of two δ-doped 2D electron layers and a metal gate electrode) and experimental results showing a linear relationship between electron mobility and electron concentration in double logarithmic coordinates Linear depletion phenomenon.