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介绍了一种实现低成本、高功率、高散热性能耿氏管的工艺制备流程,利用分子束外延生长技术(MBE)在高掺杂的InP衬底上生长n n+型的一致性掺杂外延结构,在外延结构正面利用电子束蒸发Ge/Au/Ni/Au作为器件阴极和电镀金制备作为散热层,背面通过化学湿法腐蚀形成台面(MESA)。在不同的温度下进行了退火对比实验,研究了阴极合金形成良好欧姆接触的温度条件。结果表明:退火温度为450℃时形成的金属电极的接触效果最好。关于耿氏管的正面反面制备工艺简便易行,利用Ge/Au/Ni/Au制备金属电极得到了良好的欧姆接触性能,用氯基溶液进行了湿法腐蚀实验得到了较好的垂直台面(MESA)。该制备方法有望实现优良性能的耿氏器件。
A fabrication process of Gunn tube with low cost, high power and high heat dissipation performance is introduced. MBE is used to grow n n + -type conformal doping epitaxy on highly doped InP substrate Structure, Ge / Au / Ni / Au was deposited on the surface of the epitaxial structure by electron beam evaporation as the cathode and gold electroplating process, and the back surface was formed by chemical wet etching to form a mesa (MESA). Annealing experiments were conducted at different temperatures to investigate the temperature conditions at which the cathode alloy forms a good ohmic contact. The results show that the contact effect of the metal electrode formed when the annealing temperature is 450 ℃ is the best. The preparation process of the front and back of the Gunn tube is simple and convenient. The preparation of the metal electrode by using Ge / Au / Ni / Au has good ohmic contact performance, and the wet etching experiment using the chlorine-based solution obtains the better vertical mesas MESA). The preparation method is expected to achieve good performance Gunn device.