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This study explores a strategy of using the phosphonic acid derivative(11-((12-(anthracen-2-yl)dodecyl)oxy)-11-oxoundecyl) phosphonic acid(ADO-phosphonic acid) as self-assembled monolayers(SAMs)on a Si/Si O2 surface to induce the crystallization of rubrene in vacuum deposited thin film transistors, which showed a field-effect mobility as high as 0.18 cm2/(V s). It is found that ADO-phosphonic acid SAMs play a unique role in modulating the morphology of rubrene to form a crystalline film in the thin-film transistors.
This study explores a strategy of using phosphonic acid derivative (11 - (12- (anthracen-2-yl) dodecyl) oxy) -11- oxoundecyl) phosphonic acid on a Si / Si O2 surface to induce the crystallization of rubrene in vacuum deposited thin film transistors, which showed a field-effect mobility as high as 0.18 cm2 / (V s). It is found that ADO-phosphonic acid SAMs play a unique role in modulating the morphology of rubrene to form a crystalline film in the thin-film transistors.