A COMPLETE COMPOSITE GTO MODEL FOR CIRCUIT SIMULATIONS

来源 :Journal of Electronics(China) | 被引量 : 0次 | 上传用户：mike595959

【摘要】

：

The paper presents a complete composite gate turn-off thyristor (GTO) model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice

【作者】

：

Barry W. Williams

【机构】

：

Dept.ofComputing&,ElectricalEng.,Heriot-WattUniversity,EdinburghEH144AS,U.K.

【出处】

：

Journal of Electronics(China)

【发表日期】

：

1998年2期

【关键词】

：

GTO SIMULATION MODEL GTO Simulation Model

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The paper presents a complete composite gate turn-off thyristor (GTO) model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the complete composite model a

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A COMPLETE COMPOSITE GTO MODEL FOR CIRCUIT SIMULATIONS

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