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设计并用磁控溅射方法制备了非晶 Si/Si O2 超晶格结构 ,以高纯多晶 Si为靶材 ,当以 Ar+O2 为溅射气氛时 ,得到 Si O2 膜 ,仅以 Ar为气氛时 ,得到 Si膜。重复地开和关 O2 气 ,便交替地得到 Si O2 和 Si膜。衬底在靶前往返平移 ,改变平移的速度或者改变溅射的功率 ,可以控制膜的厚度。通过透射电镜的照片可以看出 Si O2 和 Si膜具有均匀的周期结构 ,用低角 X-射线反射谱表征了超晶格的周期结构和各层的厚度。透射光谱表明 ,光学吸收边随 Si层厚度的减小向短波方向移动 ;从退火前和退火后样品的喇曼光谱的变化可判断硅量子点的存在及其尺寸。利用双绝缘层的交流电致发光器件结构 ,首次获得非晶 Si/Si O2 超晶格的蓝绿色电致发光 ,在发射光谱中存在几个分立的发光谱带 ,随 Si层厚度的减小 ,短波发光谱带的相对强度增加。
An amorphous Si / Si O2 superlattice structure was designed and prepared by magnetron sputtering. High purity polycrystalline Si was used as the target. When Ar + O2 was used as sputtering target, Si O2 film was obtained. Only Ar Atmosphere, get Si film. The O2 gas is turned on and off repeatedly, Si O2 and Si films are alternately obtained. The thickness of the film can be controlled by the back-and-forth translation of the substrate in front of the target, changing the speed of translation or changing the sputtering power. The TEM images show that the Si O2 and Si films have a uniform periodic structure, and the periodic structure and thickness of the superlattices are characterized by low-angle X-ray reflectance spectroscopy. The transmission spectra show that the optical absorption edge shifts to shortwave with the decrease of the thickness of Si layer. The existence and size of Si quantum dots can be judged from the Raman spectra of samples before and after annealing. The blue-green electroluminescence of amorphous Si / Si O2 superlattice was obtained for the first time by using a double-insulated AC electroluminescent device. There were several discrete emission bands in the emission spectrum. With the decrease of Si layer thickness, The relative intensity of the shortwave emission band increases.