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试验研究了采用两步扩散发射区结构的功率晶体管,两步扩散发射区结构在提高芯片上温度分布均匀性和器件抗二次击穿能力方面具有较好的作用.两步扩散发射区器件管芯上的温度分布较一步扩散发射区更为均匀,二次击穿耐量可提高80%以上.
The power transistor with two-step diffused emitter structure is tested and studied, and the two-step diffused emitter structure plays a good role in improving the uniformity of temperature distribution on the chip and the anti-secondary breakdown capability of the device. The temperature distribution on the core is more uniform than that of the diffused emission region and the secondary breakdown resistance can be increased by more than 80%.