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用RBS及X线衍射研究了硅上钛薄膜退火时形成硅化物的相变和生长动力学。650℃退火形成TiSi_2相,TiSi_2层生长服从Kidon抛物线层生长规律。
The phase transition and growth kinetics of the silicides formed on the Si thin films were studied by RBS and X-ray diffraction. The TiSi_2 phase was formed by annealing at 650 ℃, and the growth of TiSi_2 layer obeyed the growth of Kidon parabolic layer.