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报道了栅长为 1.5 μm Au- Al Ga N/ Ga N HFET器件的研制和器件的室温特性测试结果 .同时 ,研究了器件经30 0℃、30 min热处理对器件性能的影响 ,并对比了热处理前后器件的室温特性 .实验证明 :室温下 ,器件具有良好的输出特性和肖特基结伏安特性 ,反向漏电流较小 ,最大跨导可达 47m S/ mm;经过 30 0℃、30 m in热处理后器件的室温输出特性有显著改善 ,而且器件饱和压降明显降低 ,说明 30 0℃热处理没有给器件造成不可恢复的破坏
The development of the device with a gate length of 1.5 μm Au-Al Ga N / Ga N HFET and the test results of the device’s room temperature properties were reported.At the same time, the effect of the device heat treatment at 30 ℃ and 30 min on the device performance was investigated, The experimental results show that the device has good output characteristics and Schottky junction voltammetry at room temperature, and the reverse leakage current is small, the maximum transconductance can reach 47m S / mm; after 30 0 ℃, 30 m in the device after heat treatment room temperature output characteristics significantly improved, and the device saturation voltage drop was significantly reduced, indicating that 30 ℃ heat treatment did not cause irreparable damage to the device