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基于K.P理论框架,通过引入应变哈密顿微扰项,详细推导并建立了应变Si的价带色散关系模型.所得模型适用于任意晶向弛豫Si1-xGex(0≤x≤0.6)衬底上生长的应变Si,并且,通过该模型可以获取任意K矢方向的应变Si价带结构及空穴有效质量,对器件研究设计可提供有价值的参考.
Based on the KP theory framework, the model of strain-band dispersion relationship of strain Si is deduced and deduced in detail by introducing the perturbation term of strained Hamiltonian. The obtained model is suitable for any relaxed Si1-xGex (0≤x≤0.6) substrate Growth of strain Si, and through the model can be obtained in any k-direction direction of the strained Si valence band structure and hole effective mass, the device research and design can provide valuable reference.