利用激光脉冲沉积(PLD)技术在(302)γ-LiAlO2衬底上成功生长了非极性的a面(11■0)ZnO薄膜.衬底温度为350℃时,薄膜是混合取向(a向和c向),以c面ZnO为主,且晶粒尺寸分布很宽;提高温度达500℃,薄膜变为单一的(11■0)取向,摇摆曲线半高宽0.65°,晶粒尺寸分布趋窄,利用偏振透射谱可以明显看出其面内的各向异性.衬底温度650℃下制备的样品晶粒继续长大,虽然摇摆曲线半高宽变大,但光致发光谱(PL)带边发射峰半高宽仅为105meV,比在350℃,500℃下制备的样品小1/5. A non-polar a-plane (11 ■ 0) ZnO thin film was successfully grown on (302) γ-LiAlO2 substrate by laser pulse deposition (PLD) technique. When the substrate temperature was 350 ℃, And c direction), mainly c-plane ZnO, and the grain size distribution is very wide. When the temperature is up to 500 ℃, the film becomes a single (11 ■ 0) orientation with a FWHM of 0.65 ° and the grain size distribution And the anisotropy of the in-plane anisotropy can be clearly seen by using the polarization transmission spectrum.The grain size of the sample prepared at the substrate temperature of 650 ℃ continues to grow. Although the full width at half maximum of the rocking curve increases, the photoluminescence spectrum (PL ) The full width at half maximum of the band-edge emission peak is only 105 meV, which is 1/5 smaller than the sample prepared at 350 ° C and 500 ° C.