The most common typical bulk acoustic wave (BAW) filters are fabricated using bulk micromachining technology, but they have several disadvantages. This paper describes a new structure for front end passband BAW filters manufactured using surface micromachining. Porous silicon is used as a thick sacrificial layer. The structure reduces the influence of the support film on the filter to improve the VLSI compatibility as well as the filter quality. The cross-talk between resonators with different frequencies can be dramatically reduced by using resonators with a self-supporting structure. The most common typical bulk acoustic wave (BAW) filters are fabricated using bulk micromachining technology, but they have several disadvantages. This paper describes a new structure for front end passband BAW filters manufactured using surface micromachining. Porous silicon is used as a thick sacrificial layer The structure reduces the influence of the support film on the filter to improve the VLSI compatibility as well as the filter quality. The cross-talk between resonators with different frequencies can be dramatically reduced by using resonators with a self-supporting structure.