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采用射频等离子体增强化学气相沉积(RF-PECVD)法制备掺硼非晶硅(a-Si:H)薄膜,然后用脉冲快速光热退火(PRPTA)法对其进行固相晶化。研究结果表明:掺硼a-Si:H薄膜在550℃恒温条件下退火3h后,其结晶状况无明显变化;而通过加高温热脉冲可以在玻璃衬底上获得晶化较好的P型多晶硅薄膜。另外,非晶硅薄膜的掺硼浓度及脉冲条件对脉冲快速光热退火的效果有一定影响。
Boron doped amorphous silicon (a-Si: H) thin films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD), and then solid-phase crystallized by pulse rapid thermal annealing (PRPTA). The results show that the crystallized condition of the a-Si: H doped bismuth-doped a-Si: H thin film annealed at 550 ℃ for 3h has no significant change. However, the P-type polycrystalline silicon film. In addition, the concentration of boron-doped amorphous silicon film and pulse conditions on the pulse rapid thermal annealing effect has a certain impact.