子带跃迁的量子阱结构太赫兹探测器具有响应速度快等特点,有广泛的应用前景,越来越受到研究人员的关注。以量子力学基本原理,量子阱结构材料光吸收的特性,以及光导型探测器暗电流分析为基础,进行了量子阱厚度、势垒层Al含量和量子阱掺杂浓度等参数的Al Ga As/Ga As量子阱太赫兹探测材料结构设计,按照优化后的外延参数进行了材料生长,获得了符合设计要求的探测材料。 The quantum well structure terahertz detector with subband transition has the characteristics of fast response and so on. It has a wide range of applications and is attracting more and more researchers’ attention. Based on the basic principles of quantum mechanics, the characteristics of light absorption of quantum well structure material and the dark current analysis of photoconductive detector, the AlGaAs / AlGaAs quantum well structure parameters such as quantum well thickness, Al content of barrier layer and doping concentration of quantum well were studied. Ga As quantum well terahertz detection material structure design, according to the optimized epitaxial parameters of the material growth, access to meet the design requirements of the detection material.