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采用脉冲激光沉积法在(0001)取向的GaN以及AlGaN/GaN调制掺杂结构上制备了(111)取向的BiFeO3(BFO)薄膜。首先在导电氧化物SrRuO3和TiO2缓冲层包覆的GaN上制备了BFO薄膜,分析了在GaN上生长的BFO薄膜的面外取向、外延关系、表面形貌以及电学性能等性质。然后,在AlGaN/GaN调制掺杂结构上采用TiO2缓冲层生长了BFO薄膜,并采用光刻工艺分别在AlGaN表面制备Ti/Al/Ti/Au欧姆电极和BFO表面制备Ni/Au肖特基电极以形成二极管结构。C-V测试表明,由于BFO铁电薄膜极化的作用,BFO/TiO2/AlGaN/GaN结构具有1 V左右的逆时针窗口。
A (111) oriented BiFeO3 (BFO) thin film was prepared by pulsed laser deposition on (0001) oriented GaN and AlGaN / GaN doped structures. Firstly, BFO thin films were prepared on GaN coated with conductive oxide SrRuO3 and TiO2 buffer layer. The out-of-plane orientation, epitaxial relationship, surface morphology and electrical properties of BFO thin films grown on GaN were analyzed. Then, a BFO thin film was grown on the AlGaN / GaN doped structure using a TiO2 buffer layer, and a Ti / Al / Ti / Au ohmic electrode and a BFO surface were respectively prepared on the AlGaN surface by a photolithography process to prepare a Ni / Au Schottky electrode To form a diode structure. The C-V test shows that the BFO / TiO2 / AlGaN / GaN structure has a counterclockwise window of about 1 V due to the polarization of the BFO ferroelectric thin film.