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回顾了中子单粒子研究的国内外发展情况,介绍了近几年西北核技术研究所在西安脉冲堆开展的低能中子单粒子效应研究进展。比较了稳态与脉冲工况下中子单粒子效应的异同性;分析了含有SRAM结构器件随着特征尺寸的减小,中子单粒子效应敏感性加剧的物理机制。分析认为目前中子单粒子效应已成为小尺寸大规模互补金属氧化物半导体器件的主要中子效应表现;中子辐射效应研究中,除了位移损伤效应以外还必需重视由中子电离造成的中子单粒子效应。
Reviewing the development of neutron single particle research at home and abroad, the research progress of low energy neutron single event in Northwest Institute of Nuclear Technology in Xi’an impulse reactor is introduced. The similarities and differences between neutron single-particle effects under steady-state and pulse conditions were compared. The physical mechanism of increasing sensitivity of neutron single-particle effect with the decrease of feature size was analyzed. It is considered that the current single neutron effect has become the main neutron effect of large-scale CMOS devices. In the study of neutron radiation effect, in addition to the displacement damage effect, it is necessary to pay attention to the neutron Single particle effect.