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采用化学方法腐蚀c-面蓝宝石衬底,以形成一定的图案;利用LP-MOCVD在经过表面处理的蓝宝石衬底上以及常规c-面蓝宝石衬底上外延生长GaN薄膜.采用高分辨率双晶X射线衍射(DCXRD)、三维视频光学显微镜(OM)、扫描电子显微镜(SEM)和原子力显微镜(AFM)进行分析,结果表明,在经过表面处理形成一定图案的蓝宝石衬底上外延生长的GaN薄膜明显优于在常规蓝宝石衬底上外延生长的GaN薄膜,其(0002)面上的XRDFWHM为208.80弧秒,(1012)面上的为320.76弧秒.同时,此方法也克服了传统横向外延生长技术(LEO)工艺复杂和晶向倾斜高的缺点.
A chemical method was used to etch the c-plane sapphire substrate to form a certain pattern; the GaN film was epitaxially grown on the surface-treated sapphire substrate and the conventional c-plane sapphire substrate by using LP-MOCVD, X-ray diffraction (DCXRD), three-dimensional video optical microscope (OM), scanning electron microscope (SEM) and atomic force microscope (AFM) were used to analyze the results. The results show that GaN films epitaxially grown on the sapphire substrates Which is obviously superior to that of GaN thin films epitaxially grown on conventional sapphire substrates with 208.80 arcsec on the (0002) plane and 320.76 arcsec on the (1012) plane.At the same time, this method also overcomes the traditional lateral epitaxial growth Technology (LEO) process complexity and crystal tilt high shortcomings.