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在重掺杂硼金刚石膜上溅射沉积了Ti/Au接触 ,用CTLM测量了样品退火前后的I-V特性 ,并对大电流情况进行了讨论。就测试温度和光照强度对接触特性的影响进行了分析。定性给出了该接触的能带模型。样品接触电阻率 ρc 最低值达 1.2 3 6× 10 - 6 Ω·cm2 。
The Ti / Au contact was sputter deposited on heavily doped boron-doped diamond films. The I-V characteristics of samples before and after annealing were measured by CTLM. The high current conditions were also discussed. The effects of test temperature and light intensity on the contact characteristics were analyzed. The energy band model of this contact is qualitatively given. The lowest value of the contact resistance ρc was 1.2 3 6 × 10 - 6 Ω · cm2.