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采用双离子束共溅射技术, 通过对由Al, Si和SiO2组成的复合靶的溅射制备出掺铝的富硅二氧化硅复合薄膜(AlSiO). 其中铝和硅在薄膜中的含量可通过改变靶面上铝和硅所占的表面积来调节. 在所有的样品中, 在可见光范围均观察到仅有一个位于510 nm的电致发光(EL)谱峰. 实验结果表明, 在一定的工艺条件下适量的掺铝可明显地改善EL的启动电压及发光强度.
The Al-doped silicon-rich silica composite film (AlSiO) was prepared by double-beam co-sputtering technique by sputtering a composite target composed of Al, Si and SiO2, in which the content of aluminum and silicon in the film was By altering the surface area occupied by aluminum and silicon on the target surface.In all samples, only one electroluminescent (EL) peak at 510 nm was observed in the visible range.The experimental results show that at a certain The proper amount of aluminum doping under the process conditions can obviously improve the EL starting voltage and luminous intensity.