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电荷耦合器件(Change-coupled devices,CCD)是一种全固体自扫描摄像器件,因其具有体积小、图像畸变小、无残像和寿命长等优点,因而在摄像、探测和信息处理与存储等领域得到广泛应用.在一些特殊的场合,CCD经常要与激光光源配合使用,不可避免地存在着激光与CCD相互作用甚至产生损伤的问题.这里所说的损伤又有组成CCD的半导体材料中处于杂质能带的电子吸收激光能量大量向导带跃迁,引起暗电流增加而使器件饱和或失效的软损伤和激光束直接作用于CCD,致使器件中材料或结构硬损伤等.对前一问题,已有文献进行了相关的研究.本文利用调Q-YAG激光与NMOS结构的CCD多次重复作用产生的等离子体形貌及其Mach-Zehnder干涉图,研究了高功率激光与该种光电器件的相互作用过程.首次得到了脉宽为15ns的1064nm激光对MNOS结构相互作用过程的等离子体干涉图及有关实验结果.
Change-coupled devices (CCDs) are all-solid-state self-scanning imaging devices that have advantages in terms of small size, small image distortion, no residual image and long lifetime, and are therefore widely used in imaging, sounding and information processing and storage The field has been widely used.In some special occasions, CCD often used in conjunction with the laser light source, there is inevitably the interaction of the laser and the CCD or even damage the problem mentioned here is the damage of the semiconductor material in the CCD Absorption band energy of electrons to a large number of conduction band jump, causing the dark current increases the saturation damage or failure of soft damage and laser beam directly on the CCD, resulting in the device material or structural damage, etc. For the previous issue, has been There are literature related research.In this paper, the use of Q-YAG laser and NMOS structure of the CCD repeatedly generated plasma morphology and Mach-Zehnder interference pattern, the study of high-power laser and the optoelectronic devices mutual The first time we got the plasma interference diagram of the 1064nm laser with MNW structure of 15ns and the experimental results.