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铁电PbTiO_3薄膜具有优良的热释电性质,因其有介电常数ε_r小、热释电系数γ大、居里温度高、体积热容量小、γ和ε_r的温度系数小等优点,受到人们的极大关注.国外已用溅射法制备的PbTiO_3薄膜作成了热释电红外探测器.我们用sol-gel方法在单晶Si衬底上制备了PbTiO_3薄膜,并简要报道了它的电学性质.本文着重研究 PbTiO_3薄膜的热释电特性,主要介绍极化条件、烧结温度、膜厚等工艺因素对介电、热释电性质的影响,以及热释电系数随温度的变化关系,优化了工艺过程.
Ferroelectric PbTiO_3 thin films have excellent pyroelectric properties due to their low dielectric constant ε_r, large pyroelectric coefficient γ, high Curie temperature, small volumetric heat capacity, small temperature coefficient of γ and ε_r, Great attention has been made abroad by sputtering PbTiO_3 thin film made pyroelectric infrared detector.We sol-gel method to prepare a single-crystal Si substrate PbTiO_3 thin film, and briefly reported its electrical properties. This paper focuses on the pyroelectric properties of PbTiO_3 thin films, mainly introduces the influence of the process parameters such as polarization, sintering temperature and film thickness on the dielectric and pyroelectric properties, as well as the pyroelectric coefficient changes with temperature, and optimizes the process process.