室温下利用磁控溅射在p型Si(111)衬底上沉积了Cu薄膜.利用X射线衍射和卢瑟福背散射分别对未退火以及在不同温度点退火后样品的结构进行了表征.在此基础上,研究了Cu/SiO2/Si(111)体系的扩散和界面反应.实验结果表明:当退火温度高于450℃时出现明显的扩散现象,并且随着温度的升高,体系扩散现象会更加显著.当退火温度低于450℃时没有铜硅化合物生成,当温度达到500℃时才有铜硅化合物生成. The Cu thin films were deposited on p-type Si (111) substrates by magnetron sputtering at room temperature.The structures of samples after annealing at different temperatures were characterized by X-ray diffraction and Rutherford backscattering, respectively. On this basis, the diffusion and interfacial reaction of Cu / SiO2 / Si (111) system were studied.The experimental results show that when the annealing temperature is higher than 450 ℃, obvious diffusion occurs, and with the increase of temperature, the diffusion of the system The phenomenon will be more pronounced.When the annealing temperature is below 450 ℃, no copper-silicon compounds are formed, and when the temperature reaches 500 ℃, copper-silicon compounds are formed.