介绍了TA3多层板及TA3+TC4真空扩散焊工艺,并进行了接头质量分析。结果表明,高的焊接温度造成了晶粒的长大。加压不均匀容易造成结合界面上孔洞收缩不彻底,而留有晶内微孔。TA3+TC4属于软硬结合,有利于界面孔洞的消失,但应注重焊前表面清理;以去除表面致密的氧化膜TiO2,避免接头氧化膜夹渣的产生。 The TA3 multilayer board and TA3 + TC4 vacuum diffusion welding process are introduced, and the joint quality analysis is carried out. The results show that high soldering temperature caused grain growth. Uneven pressure easily lead to the interface of the hole shrinkage is not complete, leaving the intra-micro-holes. TA3 + TC4 is a combination of hard and soft, which is beneficial to the disappearance of interface voids. However, it should pay attention to the surface cleaning before welding to remove the dense oxide film TiO2 and avoid the occurrence of oxide film inclusion.