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本文通过对ＩｎＳｂ／ＧａＡｓ半导体界面实验高分辨原子像的计算机定量化分析得到了界面位错区附近的晶格点阵畸变位移分布。基于该实验结果文中提出了ＩｎＳｂ／ＧａＡｓ半导体界面的结构互平衡界面结构模型。该界面模型合理地解释了界面位错的起因及ＩｎＳｂ薄膜在ＧａＡｓ基体上外延生长过程中的物理现象。计算机模拟的界面电子衍射谱和高分辨原子像与实验观察结果的一致性符合验证了所建立的界面模型的正确性
In this paper, by means of computer quantitative analysis of InSb / GaAs semiconductor interface experimental high resolution atomic images, the distortion distribution of lattice lattice near the interface dislocation region is obtained. Based on the experimental results, the structural inter-equilibrium interface structure model of InSb / GaAs semiconductor interface is proposed. The interface model reasonably explains the cause of interfacial dislocations and the physical phenomena during the epitaxial growth of InSb thin films on GaAs substrates. Computer simulation of the interface electron diffraction spectra and high-resolution atomic images and experimental observations consistent with the verification of the established interface model is correct