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采用反应射频磁控溅射法在Si(100)基片上制备了高c轴择优取向的ZnO薄膜,研究了退火温度对ZnO薄膜的晶粒尺度、应力状态、成分和发光光谱的影响,探讨了ZnO薄膜的紫外发光光谱和可见发光光谱与薄膜的微观状态之间的关系.研究结果显示,在600—1000℃退火温度范围内,退火对薄膜的织构取向的影响较小,但薄膜的应力状态和成分有比较明显的变化.室温下光致发光光谱分析发现,薄膜的近紫外光谱特征与薄膜的晶粒尺度和缺陷状态之间存在着明显的对应关系;而近紫外光谱随退火温度升高所呈现的整体峰位红移是各激子峰相对比例变化的结果.此外,研究结果显示,薄膜的可见发光光谱对退火温度极为敏感.
ZnO films with high c-axis preferred orientation were prepared on Si (100) substrates by reactive rf magnetron sputtering. The effects of annealing temperature on the grain size, stress state, composition and luminescence spectra of ZnO thin films were investigated. The relationship between the UV emission spectra and the visible luminescence spectra of ZnO films and the microstructure of the films was studied.The results show that annealing at 600-1000 ℃ has little effect on the texture orientation of the films, State and composition have obvious changes.Ultraviolet spectrophotometry analysis at room temperature found that there is a clear correspondence between the near-UV spectral characteristics of thin films and the grain size and defect state of the films, while the near-ultraviolet spectrum changes with annealing temperature The overall peak redshift presented by the height is the result of the relative ratio variation of the exciton peaks.In addition, the results show that the visible luminescence spectrum of the film is very sensitive to the annealing temperature.