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文中设计、制备并表征了同质集成的可见光双工通信芯片。采用硅衬底剥离和悬空氮化物薄膜背后减薄技术,在硅衬底GaN晶圆上制备了同质集成悬空p-n结InGaN/GaN多量子阱二极管(Multiple-Quantum-Well Diode,MQW-diode)和悬空波导的光子芯片。利用悬空p-n结InGaN/GaN MQW-diode可以同时发光和光探测的物理特性,将两个InGaN/GaN MQW-diode同时作为收发端,发出的调制光耦合进悬空光波导进行传输,并最后被另一个收发端接收,叠加信号可以通过自干扰消除法进行提取处理,实现芯片内可见光双工通信。这种同质集成光源、光波导和光电探测器的可见光通信芯片为发展高速同频同时全双工可见光通信芯片奠定了器件基础。
The article designs, prepares and characterizes the homogeneously integrated visible light duplex communication chip. The homogeneously integrated pn-junction InGaN / GaN MQW diode is fabricated on a silicon substrate with a GaN substrate by stripping with a silicon substrate and a backside thinning technique of a vacant nitride film, And dangling waveguide photonic chip. The two InGaN / GaN MQW-diodes are used as the transmitting and receiving ends at the same time, the emitted modulated light is coupled into the suspended optical waveguide for transmission, and finally the other InGaN / GaN MQW- Receiving and receiving end to receive, superimposed signal can be extracted by self-interference elimination method to achieve the chip visible light duplex communication. This homogeneous integrated light source, optical waveguide and photodetector visible light communication chip for the development of high-speed at the same time full-duplex visible light communication chip laid the foundation for the device.