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采用低压MOCVD外延技术生长的GaInAs/AlGaAs应变量子阱大光腔结构材料结构设计,利用低压MOCVD外延技术生长了3英寸(75 mm)激光器外延片,进而设计制作了976 nm大功率低热阻连续激光器芯片。采用以及高热导率的无氧铜材料设计制作了大功率微通道热沉,采用In焊料芯片倒装烧结工艺,制作了976 nm连续激光器阵列单条。在20℃水冷条件下,输入电流120 A,工作电压1.51 V,输出功率达到118 W,电光功率转换效率约65%。将10只微通道阵列单条堆叠组装,制作了连续1 000 W微通道叠层阵列。在20℃水冷条件下,输入电流120 A,输出功率达到1 130 W,工作电压1.45 V,电光功率转换效率约65%。
The structure of GaInAs / AlGaAs strained quantum well large cavity structure material grown by low-voltage MOCVD epitaxy has been designed. The 3-inch (75 mm) laser epitaxial wafer has been grown by low-voltage MOCVD epitaxy, and then a 976 nm high power low thermal resistance continuous laser chip. High-power microchannel heat sinks were designed and fabricated using oxygen-free copper with high thermal conductivity. In-chip solder flip chip sintering was used to fabricate a single 976 nm continuous laser array. Under the condition of 20 ℃ water cooling, the input current is 120 A, the working voltage is 1.51 V, the output power is up to 118 W and the electro-optical power conversion efficiency is about 65%. Ten microchannel arrays were stacked and assembled to produce a continuous 1 000 W microchannel stack array. Under the condition of 20 ℃ water cooling, the input current is 120 A, the output power reaches 1 130 W, the working voltage is 1.45 V, and the electro-optical power conversion efficiency is about 65%.