注氧隔离法 (SIMOX)和体硅智能剥离法 (smart cut)是目前制备绝缘体上的硅 (SOI)材料的最重要的两种方法。而离子注入是其中最主要工艺过程。本文简述了等离子体基离子注入 (PBII)在制备SOI的两种方法中应用的国内外研究现状。讨论了两种方法中需要考虑的共性问题 ,包括注入剂量的均匀性、等离子体中离子的选择、单一能量的获得以及避免C、N、O及金属粒子的污染等。并且针对SIMOX和smart cut各自的工艺特点 ,分别讨论了不同工艺参数的选择、工艺中出现的主要问题和一些已经得到的解决办法 SIMOX and bulk silicon Smart cut is the two most important methods currently available for the production of silicon on insulator (SOI) materials. Ion implantation is one of the most important process. In this paper, the current research status of plasma-based ion implantation (PBII) in the two methods of preparing SOI is briefly described. The common problems to be considered in the two methods are discussed, including the uniformity of injected dose, the choice of ions in plasma, the acquisition of single energy and the pollution of C, N, O and metal particles. And for SIMOX and smart cut their respective process characteristics, respectively, the choice of different process parameters were discussed in the process of the main problems and some have been the solution