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在室温(15～35℃),大气气氛中研究了InGaAsP/InP双异质结发光二极管的退化特性。有二种慢退化类型,连续工作10~4小时后,InGaAsP/InP发光二极管的电学参数、光学参数(除原有暗结构的B型慢退化器件,老化初期光功率下降10～20％外)均无明显变化。用红外电视选行扫描仪观察了老化过程中发光区的EL图象。研究了该器件的退化特性与EL图象的变化规律,找出了它们的对应关系。用扩展缺陷模型解释了InGaAsP/InP双异质结发光管的退化机理。
The degradation characteristics of InGaAsP / InP double heterojunction LEDs were investigated at room temperature (15 ~ 35 ℃) in the atmosphere. There are two types of slow degradation, continuous work 10 to 4 hours after the InGaAsP / InP light-emitting diode electrical parameters, optical parameters (except for the dark structure of B-type slow degradation device, the optical power decreased by 10 to 20% No significant changes. An infrared television scanner was used to observe the EL image of the light-emitting region during the aging process. The degradation characteristics of the device and the change rule of the EL image were studied, and their corresponding relations were found out. The extended defect model is used to explain the degradation mechanism of InGaAsP / InP double heterostructure LED.