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采用双槽电化学腐蚀法制备了纳米多孔硅,主要研究了腐蚀时间和腐蚀电流对重掺杂p型(100)硅衬底上制备的多孔硅层有效光学厚度的影响,采用U-4100光谱仪、场发射扫描电子显微镜(FESEM)技术对所制备的多孔硅光子晶体的结构和有效光学厚度进行了分析表征。研究结果表明,通过合理地选择腐蚀时间和腐蚀电流,可以比较精确地制备特定有效光学厚度的多孔硅薄膜,此方法可广泛应用于纳米多孔硅光子晶体的制备中。
The effects of etching time and corrosion current on the effective optical thickness of porous silicon layer prepared on heavily doped p-type (100) silicon substrate were investigated by using dual-cell electrochemical etching method. U-4100 spectrometer , Field emission scanning electron microscopy (FESEM) technology for the preparation of porous silicon photonic crystal structure and effective optical thickness were characterized. The results show that the porous silicon thin films with specific effective optical thickness can be prepared more accurately by choosing the appropriate etching time and etching current. This method can be widely used in the preparation of nanoporous silicon photonic crystals.