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AlGaN/GaN高电子迁移率晶体管(HEMT)器件由于高压、大功率等应力条件导致的电学退化过程中往往伴随着结构退化现象产生,结构退化研究对提高器件可靠性起着重要的作用。介绍了近年来国外在高压、大功率、高温、加压时间及辐射等不同因素对GaNHEMT器件结构退化的影响方面的研究进展。发现GaNHEMT器件的栅边缘下方出现的凹点和裂纹等结构缺陷是高压、大功率、高频等许多应力条件下都会出现的普遍现象,且凹点和裂纹的退化程度随电学退化程度的加深而加大,并导致器件的可靠性下降。GaNHEMT器件结构退化现象的本质以及改进措施将是未来研究的重点。
Structural degeneration phenomenon often occurs in AlGaN / GaN high electron mobility transistor (HEMT) devices due to high-voltage, high-power and other stress conditions. Structural degeneration studies play an important role in improving device reliability. In recent years, the research progress on the influence of different factors such as high pressure, high power, high temperature, pressing time and radiation on the structural degeneration of GaNHEMT devices is introduced. The structural defects such as pits and cracks appearing under the gate edge of the GaNHEMT device are found to be common phenomena under many stress conditions such as high voltage, high power and high frequency, and the degradation degree of pits and cracks with the deepening of the degree of electrical degradation Increase, and cause the reliability of the device to drop. The nature of GaNHEMT device structure degradation and the improvement measures will be the focus of future research.