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超导磁储能用电压源型变流器是超导磁体与电网进行能量交换的桥梁,采用复杂的级联结构,大量使用高频大功率开关器件(如IGBT).工作时由于开关器件动作会产生很高的dv/dt和di/dt,引起严重的电磁干扰.首先,对超导磁储能电压源型变流器电磁干扰产生机理进行分析,进而提出该级联电路的传导电磁干扰等效电路模型;其次,对电路中各器件的高频特性进行分析.最后通过仿真,对比分析电路器件高频寄生参数对电磁干扰的影响.分析结果表明,器件的高频寄生参数对传导电磁干扰有很大影响,在高频段更为明显.,The voltage source converter of superconducting magnetic energy storage (SMES) is the bridge between superconducting magnets and power grid exchanging energy,and its having a complex cascade structure,and it include many high frequency power switching devices (such as IGBT).The switching device will produce high dv/dt and di/dt when acting,and bring serious electromagnetic interference (EMI).Firstly,the mechanism of EMI generation of SMES voltage source converter,and puts forward the equivalent circuit model of EMI.Secondly,the high frequency characteristics of components in the circuit are analyzed.Finally,analyzing the influence of high frequency parasitic parameters of circuit components for the SMES voltage converter’s EMI by simulation,the results showed that the high frequency parasitic parameters of components had a serious influence on the conductive electromagnetic interference of the converter,especially in high frequency.