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对35份西瓜核心种质进行了抗枯萎病鉴定,再采用SRAP分子标记技术对35份核心种质进行多态性分析。从63对引物组合中筛选出46对多态性引物。SRAP扩增共产生445个条带,其中262条为多态性条带,多态率为58.88%。平均每对引物产生9.67个条带。在对供试材料进行群体结构分析的基础上,利用TASSEL软件对多态性标记与枯萎病抗性进行关联分析。群体遗传结构分析将35份西瓜核心种质分为3大群体:1个野生西瓜群体和2个栽培种群体。分析发现在2个栽培种群体中存在基因渗透。聚类分析结果与群体遗传结构分析结果一致,分为4个类群,其中第2类群又细分为5个小类群。聚类分析结果说明具有相同抗性水平的材料倾向于聚在一起。关联分析发现有1个标记位点与枯萎病抗性显著关联(P<0.01),该位点对表型性状的解释率为0.2035。本研究结果表明利用SRAP标记可以有效地对西瓜种质资源进行群体结构的划分,且关联分析能够找到与西瓜枯萎病抗性相关联的SRAP标记,为西瓜抗病育种和分子标记辅助选择奠定了基础。
35 watermelon core germplasms were identified as Fusarium wilt. SRAP molecular markers were used to analyze the genetic diversity of 35 core collections. A total of 46 polymorphic primers were screened from 63 primer combinations. A total of 445 bands were generated by SRAP amplification, of which 262 were polymorphic bands with a polymorphism rate of 58.88%. An average of 9.67 bands per pair of primers were produced. Based on the population structure analysis of the tested materials, TASSEL software was used to analyze the association of the polymorphic markers with Fusarium resistance. Analysis of population genetic structure 35 watermelon core collections were divided into 3 groups: 1 wild watermelon population and 2 cultivated population. Analysis found that there was genetic penetration in two cultivars. The result of cluster analysis is consistent with the results of population genetic structure analysis, which is divided into four groups, of which the second group is subdivided into five subgroups. Cluster analysis results show that materials with the same level of resistance tend to come together. Correlation analysis showed that one marker locus was significantly associated with Fusarium resistance (P <0.01). The locus explained the phenotypic trait as 0.2035. The results of this study indicated that SRAP marker can effectively divide the watermelon germplasm resources into groups, and the correlation analysis can find SRAP markers associated with Fusarium wilt resistance, which laid the foundation for watermelon resistance breeding and molecular marker-assisted selection basis.