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本文介绍了意法半导体公司(STMicroelectronics)首次提出的1200V/20A的SiC MOSFET,并与1200V常闭型SiC JFET(结型场效应晶体管)和1200V SiC BJT(双极结型晶体管)作对比。全面比较了3种开关器件工作在T=25℃、电流变化范围(1A~7A)的动态特性,并在T=125℃、ID=7A条件下做了快速评估。尽管SiC MOSFET的比通态电阻(Ron*A)很高,但与另外两种器件相比仍被认为是最有前景的开关器件:SiC MOSFET的总动态损耗远远低于SiC BJT和常闭型SiC JFET,且驱动方案非常简单。因此在高频、高效功率转换领域中,SiC MOSFET是最好的选择。
This article introduces the 1200V / 20A SiC MOSFET first proposed by STMicroelectronics and compares it with a 1200V normally closed SiC JFET (Junction Field Effect Transistor) and a 1200V SiC BJT (Bipolar Junction Transistor). The dynamic characteristics of three switching devices operating at T = 25 ℃ and current varying range (1A ~ 7A) are compared fully and quickly evaluated at T = 125 ℃ and ID = 7A. Although SiC MOSFETs have higher specific on-resistance (Ron * A), they are still considered the most promising switching devices compared to the other two devices: the total dynamic loss of SiC MOSFETs is much lower than that of SiC BJTs and normally-off Type SiC JFET, and the driving scheme is very simple. So in the high-frequency, high-efficiency power conversion in the field, SiC MOSFET is the best choice.