ZnO是一种宽禁带半导体材料,它是高阻材料。为了增强ZnO薄膜的导电性能,采用Sol-gel法,结合旋转涂覆技术在Si(100)衬底上制备了ZnO∶Cd薄膜,掺镉浓度分别为2%～10%。各种浓度的样品以金(Au)作电极做成叉指电极,并用绝缘电阻测试仪对掺镉后ZnO∶Cd进行表面电阻率的测试。根据测试结果对所制备的ZnO∶Cd薄膜的电学性能进行了分析。分析表明采用掺杂方法,制备ZnO∶Cd薄膜并进行热处理,大大降低了电阻率,从而增强了ZnO∶Cd薄膜的导电性能,优化了工艺参数。 ZnO is a wide bandgap semiconductor material, which is a high resistance material. In order to enhance the electrical conductivity of ZnO thin films, ZnO: Cd films were prepared on Si (100) substrate by spin-coating method with Sol-gel method. The Cd content was 2% -10%. Various concentrations of gold (Au) as the electrode made of interdigital electrodes, and the insulation resistance tester for cadmium doped ZnO: Cd surface resistivity of the test. The electrical properties of ZnO: Cd films prepared according to the test results were analyzed. The analysis shows that the doping method is adopted to prepare ZnO:Cd thin films and heat treatment, which greatly reduces the resistivity and enhances the electrical conductivity of ZnO: Cd films and optimizes the process parameters.