SiO2 Deposition Using Atmospheric Pressure Plasma

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：hsuyh412

【摘要】

：

Plasma etch processes used for integrated circuits fabrication become more and more challenging when the devices dimensions are shrinking and the etch processes

【作者】

：

Jae Beom Park Geun Young Yeom

【机构】

：

SKKUAdvancedInstitudeofNanoTechnology(SAINT),SungkyunkwanUniversity,Suwon,Kyunggi-do440-746,SouthKor

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年7期

【关键词】

：

Atmospheric Pressure PE-CVD SiOx Double Discharge system

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Plasma etch processes used for integrated circuits fabrication become more and more challenging when the devices dimensions are shrinking and the etch processes have to stop on thin layers (less than 2nm) of materials.

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SiO2 Deposition Using Atmospheric Pressure Plasma

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