Enhancement of Polyimide/Copper Film Adhesion by Dense Carbon Interlayer using Microwave Plasma CVD

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户:xiangdi
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Polyimide films have been widely used in various electronic devices that are especially called as ubiquitous tools.
其他文献
SiOC(-H) thin films with low-dielectric-constant have been prepared by using plasma-enhanced atomic layer deposition.I-V and C-V characteristics of the SiOC(-H) films were measured for the meatal-insu
The scaling down of metal-oxide-semiconductor field effect transistors (MOSFETs) through successful gate-last integration of high-k dielectric and metal electrodes in gate stacks for high-performance
Multilevel interconnection structures comprising of low-k films with inlaid copper wires in a dual damascene process have been identified as the new generation technology in the National Technology Ro
ZnO seed layer was deposited on glass by oblique angle sputtering method and Cr thin film as a metal barrier was patterned by lift-off technique.
The micromixer that is applied for the electroosmotic effect in this study takes two fluids from different inlets and combines them into a single channel and these are mixed by electric fields in the
Recently,3D device structure with high-k gate dielectric/metal gate (HKMG) such as Tri-Gate transistor for 22nm node technology was reported to enhance performance and lower power dissipation.
Molybdenum and its alloys are extensively utilized in thin film transistor industry for copper metallization because of their high thermal stability,good electrical conductivity and adhesion with glas
Synthesis methods for high quality polycrystalline Ge have recently been researched for the application of thin film transistors and solar cells.
Source/drain (S/D) thermal formation is a strenuous issue on a single crystalline Si (s-Si) for the application of LCD and 3D integration because the minimum temperature required for S/D activation is
Hydrogen-free amorphous carbon (a-C) films were deposited by a high density plasma assisted sputtering source (HiPASS).The HiPASS transports a high density (>1013cm-3) Ar plasma from plasma source to