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对全耗尽 SOI CMOS技术中的 Ge预非晶化硅化物工艺进行了研究 .Ge的注入 ,使 Si非晶化 ,减小了硅化物的形成能量 .Ti硅化物在非晶层上形成 .与传统的 Ti硅化物相比 ,注 Ge硅化物工艺有两个明显的特点 :一是硅化物形成温度较低 ;二是硅化物厚度容易控制 .采用注 Ge硅化物工艺 ,使源漏薄层电阻约为 5 .2Ω /□ .经过工艺流片 ,获得了性能良好的器件和电路 ,其中 ,当工作电压为 5 V时 ,0 .8μm 10 1级环振电路延迟为 45 ps
The Ge pre-amorphization silicide process in a fully depleted SOI CMOS technology was studied.Ge implantation resulted in amorphization of Si, which reduced the formation energy of the silicide, and Ti silicide was formed on the amorphous layer. Compared with the conventional Ti silicide, the Ge silicide implantation process has two obvious features: one is the low formation temperature of the silicide, and the other is that the thickness of the silicide is easy to control. The Ge silicide process is used to make the source and drain thin layers The resistance is about 5 2Ω / □ .After the process flow sheet, get good performance of the device and circuit, which, when the operating voltage of 5 V, 0 .8μm 10 1 loop oscillator circuit delay of 45 ps