众所周知,磨角及化学染色是显示硅的扩散p—n结的一种有效方法。对砷化镓来说,这种方法可用来显示由扩散或外延生长制成的p—n结。但是至今还不足以显示厚度低于1微米的薄外延层的截面图。本文的目的是叙述一种能够清楚的显示砷化镓结的新染色法。用这种方法进行化学染色的过程中对一个斜角的面积提供一定的 As we all know, grinding angle and chemical staining is an effective way to show the diffusion of silicon p-n junction. For gallium arsenide, this method can be used to show p-n junctions made by diffusion or epitaxial growth. But so far it is not enough to show a cross-sectional view of a thin epitaxial layer with a thickness below 1 micron. The purpose of this article is to describe a new staining method that clearly shows gallium arsenide junctions. In this method of chemical staining process to provide a bevel area