本文指出DX中心电容测量中边区的重要性,提出一种新的瞬态C-V方法,可以用来测量DX中心浓度、导带电子浓度和边区的空间电荷分布及导带电子浓度随温度的变化关系,并由此导出测量DX中心热电离能的方法。另外,还对DX中心正∪和负∪两种模型的理论分析和实验结果进行了比较,得出不同模型所应满足的附加条件。 This paper points out the importance of the edge region in the capacitance measurement of the DX center and proposes a new transient CV method that can be used to measure the DX center concentration, the conduction band electron concentration, the space charge distribution in the edge region, and the conduction band electron concentration versus temperature , And derive the method of measuring the thermal ionization energy of DX center. In addition, the theoretical analysis and experimental results of positive and negative DX models of DX center are also compared, and the additional conditions that different models should meet are obtained.