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本文是“氮化硼片源扩散下的硅表面机构”一文的续篇,描述用扫描电子显微镜、椭偏光仪等方法对氮化硼片源扩散下的硅表面Si-B相所进行的观测。 实验发现,当Si-B相较薄时,它具有多孔性的结构,随着扩散时间的增长和厚度增加,发生结晶化过程;干涉色和折射率也随厚度而变化;与SiO_2相比,它氧化迅速而腐蚀缓慢;在带有Si-B相的p-n结伏安特性曲线上,它表现为一个线性电阻,阻值与厚度有关。
This article is a continuation of the article “Silicon Surface Mechanisms Under Boron Nitride Source Diffusion” and describes the observation of the Si-B phase on the Si surface by diffusion of a boron nitride source using scanning electron microscopy and ellipsometry. The results show that when Si-B phase is thinner, it has a porous structure. With the increase of diffusion time and thickness, the crystallization process takes place. The interference color and refractive index also change with the thickness. Compared with SiO_2, It oxidizes rapidly and slowly; it behaves as a linear resistance on the pn junction voltammogram with Si-B phase, the resistance is related to the thickness.