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在80～350K的温度范围内,已测得n~+-GaAs-非掺杂Ga_(0.6)Al_(0.4)As-n-GaAs电容的电流随电压变化曲线(I-V特性)和电容随电压变化曲线(C-V特性)。在低温下此结构的特性类似于一只半导体-绝缘体-半导体二极管,此二极管的底部界面势垒高度和顶部界面势垒高度分别为0.38eV和0.40eV。由于衬底耗尽层的形成,I-V曲线出现整流特性。C-V曲线说明了反偏情况下形成耗尽层、正偏情况下形成积累层,积累层中的电子浓度大于10~(12)/cm~2。此C-V曲线与SIS结构的标准理论相符,假设了积累层中的电子服从费米-狄拉克统计,其中未计入0.16V的电压偏差。
The current of n ~ + -GaAs-undoped Ga_ (0.6) Al_ (0.4) As-n-GaAs has been measured with the change of voltage (IV characteristics) and capacitance with voltage in the temperature range of 80 ~ 350K Curve (CV characteristics). This structure has characteristics similar to a semiconductor-insulator-semiconductor diode at low temperatures. The diode bottom barrier height and top barrier barrier height are 0.38 eV and 0.40 eV, respectively. Due to the formation of the depletion layer of the substrate, the rectification characteristics appear in the I-V curve. The C-V curve shows that the depletion layer is formed under reverse bias and the accumulation layer is formed under the positive bias. The electron concentration in the accumulation layer is more than 10 12 / cm 2. This C-V curve is consistent with the standard theory of the SIS structure, assuming that the electrons in the accumulation layer follow the Fermi-Dirac statistics, excluding the voltage deviation of 0.16V.