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本文叙述了适用于轴对称强流电子光学系统各种磁结构的部份屏蔽流过渡区设计方法。通过对磁系统和电子枪的参数进行综合选取,可实现磁系统与电子枪的最佳匹配。用此方法实现了屏蔽系数大于0.8,电子注波动小于1％的电子光学系统。设计步骤大体可归纳为下面三步: 1.求阳极出口面α处归一化平衡条件R_α和R_α′与R_P的关系曲线。解方程时把P_θ作为常数,R_0和K_c作为参数,向阴极方向数值求解方程,可以获得一组以压缩比M和K_c为参数的不同R_P下的r_a-r_a′曲线。
In this paper, the design method of partial shield flow transition zone for various magnetic structures of axisymmetric strong current electron optical system is described. Through the comprehensive selection of the parameters of the magnetic system and the electron gun, the best matching between the magnetic system and the electron gun can be realized. With this method, the electronic optical system with the shielding coefficient of more than 0.8 and the electron injection fluctuation of less than 1% is realized. The design steps can be generalized into the following three steps: 1. Seek the normal equilibrium conditions at the anode exit surface, R_α and R_α ’, and R_P curve. When solving equations, P_θ is taken as a constant, R_0 and K_c are used as parameters, and the equation is solved numerically to the cathode direction. A set of r_a-r_a ’curves with different compression ratios M and K_c as parameters can be obtained.