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利用有限元分析软件ANSYS对蓝宝石基GaN薄膜的应力进行了模拟分析,并通过理论计算验证了其合理性。模拟出了蓝宝石基GaN薄膜应力的分布情况。分析了应力与沉积温度、薄膜厚度、衬底厚度的关系,同时研究了不均匀温度分布对应力的影响。模拟结果显示:薄膜上表面在径向上,中心处热应力最大,薄膜边缘应力发生了突降,其他部分应力分布比较均匀。研究表明沉积温度升高、薄膜厚度减小以及衬底厚度增大都会使热应力变大。衬底径向温度不均匀时,热应力有增大的趋势,且温差越大,热应力就越大。
The finite element analysis software ANSYS was used to simulate the stress of sapphire GaN film. The rationality was verified by theoretical calculation. The stress distribution of sapphire-based GaN film is simulated. The relationship between stress and deposition temperature, film thickness and substrate thickness was analyzed. Meanwhile, the effect of inhomogeneous temperature distribution on stress was also studied. The simulation results show that the thermal stress in the radial direction and the center of the film is the highest, the stress in the edge of the film is abruptly decreased, and the stress distribution in the other part is relatively uniform. Research shows that the higher the deposition temperature, the smaller the film thickness and the larger the substrate thickness, the larger the thermal stress. When the substrate radial temperature is not uniform, the thermal stress tends to increase, and the larger the temperature difference, the greater the thermal stress.