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利用金属蒸气真空弧 (MEVVA)离子源将稀土元素Er离子掺杂到富硅热氧化SiO2 /Si薄膜中。卢瑟福背散射 (RBS)和X 射线电子能谱仪 (XPS)分析表明 ,Er浓度可达原子百分数 (x)～ 10 ,即Er的原子体浓度为～ 10 2 1·cm-3 。XPS研究发现 ,随着Si注量增大 ,退火态样品表面硅含量增多 ,热氧化硅含量减少。反射式高能电子衍射 (RHEED)和原子灵敏度因子法 (AFM)研究表明 ,样品表面没有大量Er析出或铒硅化物形成 ,退火后表层中Si外延再生长、有针状微晶硅颗粒形成。在 77K及室温下 ,研究了Er掺杂富硅热氧化SiO2 /Si薄膜的近红外区 1 5 4μm附近光致发光光谱
The rare-earth element Er ions are doped into the Si-rich SiO2 / Si film by metal vapor vacuum arc (MEVVA) ion source. Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS) analysis show that Er concentration can reach atomic percentage (x) ~ 10, that is, the concentration of Er is ~ 10 2 1 · cm-3. XPS study found that with the increase of Si injection, the surface silicon content of annealed samples increased, and the thermal silica content decreased. Reflective high energy electron diffraction (RHEED) and atomic sensitivity factor (AFM) studies show that there is not a large amount of Er precipitation or erbium silicide formation on the sample surface. After annealing, Si epitaxially grows again in the surface layer and acicular microcrystalline silicon particles are formed. At 77K and room temperature, the photoluminescence spectra of Er-doped Si-rich SiO2 / Si films near 154nm