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本文用直线法分析了具有半绝缘衬底和ｎ＋重掺杂外延层的Ⅲ－Ⅴ族化合物半导体行波调制器中共平面行波电极的微波特性．首先指出了在这种共平面微波带线中奇对称模和偶对称模的不同作用，由此详细地分析了调制器各结构参数对奇对称模特性的作用．在对微波特性分析的基础上，设计出了高速行波光波导调制器的结构，器件的理论带宽可大于４０ＧＨｚ．最后对分析获得的微波特性进行了讨论，指出了用准静态法分析微波特性的可能性．
In this paper, the microwave characteristics of the coplanar traveling-wave electrodes in a III-V compound semiconductor traveling wave modulator with a semi-insulating substrate and an n + heavily doped epitaxial layer are analyzed by the straight line method. Firstly, the different roles of odd-symmetric modes and even-symmetric modes in this coplanar microwave stripline are pointed out, and the effects of various structural parameters of the modulator on the odd-symmetric modes are analyzed in detail. Based on the analysis of the microwave characteristics, the structure of the high speed traveling wave optical waveguide modulator is designed. The theoretical bandwidth of the device can be greater than 40GHz. Finally, the characteristics of the microwave obtained by the analysis are discussed, and the possibility of analyzing the microwave characteristics by the quasi-static method is pointed out.