在表面微机械加工技术中，当牺牲层腐蚀后，已被释放的表面可动微结构会粘结在衬底上使器件失效。另外牺牲层腐蚀通常是器件制造的最后一步，这样形成的ＣＭＯＳ电路的表面保护也是困难的。本文提出一种表面可动微结构的释放新工艺，可以避免上述现象。其方法是把牺牲层腐蚀紧随在多晶硅结构层淀积以后，而在最后的工艺步骤中把已经释放的多晶硅结构层进行干法成形。这样既不会发生可动微结构的粘连，也使ＣＭＯＳ电路免受侵蚀。 In surface micromachining, after the sacrificial layer is etched, the surface-movable microstructures that have been released may bond to the substrate to deactivate the device. In addition, sacrificial layer etching is usually the last step in device fabrication, and surface protection of the CMOS circuitry thus formed is also difficult. In this paper, we propose a new process of releasing the surface of the movable microstructure to avoid the above phenomenon. The method is to etch the sacrificial layer immediately after the polysilicon structure layer is deposited, and to dry-mold the released polysilicon structure layer in the final process step. This will not happen moving adhesion of microstructures, but also make CMOS circuits from erosion.