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在高纯半绝缘衬底上采用国产的外延技术和自己开发的器件设计及工艺技术,研制出在S波段连续波输出功率大于10 W、功率增益大于9 dB、功率附加效率不低于35%的性能样管,比研制初期的3～5 dB的功率增益得到了较大幅度的提高,初步显现了SiC器件在S波段连续波大功率、高增益方面的优势。采用亚微米光刻和低欧姆接触形成及减小附加寄生参量,使器件在更大功率输出的情况下,功率增益和功率附加效率得到了明显提升,证明采取的措施是有效的。
In the high-purity semi-insulating substrate using domestic epitaxial technology and its own device design and process technology developed in the S-band CW output power is greater than 10 W, power gain greater than 9 dB, additional power efficiency of not less than 35% Of the performance of the sample tube, compared with the early development of 3 ~ 5 dB power gain has been greatly improved, showing the SiC device in the S-band CW high power, high gain advantages. Submicron photolithography and low ohmic contact formation and reduction of additional parasitic parameters, the device in the case of higher power output, the power gain and power added efficiency has been significantly improved, to prove that the measures taken are effective.