论文部分内容阅读
采用过滤阴极真空电弧技术以PH_3为掺杂源,施加0—200 V基底负偏压,制备了掺磷四面体非晶碳(ta-C:P)薄膜,利用X射线光电子能谱(XPS)和Raman光谱研究ta-C:P薄膜的微观结构,通过测定变温电导率和电流-电压曲线,考察ta-C:P薄膜的导电行为。结果表明,磷掺入增加了薄膜中sp~2杂化碳原子含量和定域电子π/π~*态的数量,提高了薄膜的导电能力,且以-80 V得到的ta-C:P薄膜导电性能最好,在293—573 K范围内ta-C:P薄膜中的载流子表现出跳跃式传导和热激活传导两种导电机制,电流-电压实验证明ta-C:P薄膜为n型半导体材料。
A negative electrode bias voltage of 0-200 V was applied to the phosphide-doped tetrahedron amorphous carbon (Ta-C: P) thin films by using the filtered cathode vacuum arc technique with PH_3 as the dopant source. X-ray photoelectron spectroscopy (XPS) And Raman spectra of ta-C: P film microstructure, by measuring the temperature conductivity and current-voltage curve to examine the ta-C: P conductive film. The results showed that the incorporation of phosphorus increased the amount of sp ~ 2 hybridized carbon atoms and the π / π ~ * number of localized electrons in the film, and increased the conductivity of the film. The ta-C: P The conductivity of the film is the best. In the range of 293-573 K, the carriers in the ta-C: P film exhibit two types of conduction mechanisms, hopping conduction and heat activation conduction. The current-voltage experiments show that the ta-C: n-type semiconductor material.