硅基光电子学无疑是今后光电子学发展的方向。这就要求硅基材料能够满足发光器件的要求，从而达到光电集成的目的。因为硅体材料具有非直接带隙的特点，其发光效率很低，所以利用硅基低维量子结构，尤其是量子点结构提高硅基材料的发光性能一直是国内外本领域的一个研究特点。本文对近年来硅基量子点的制备及发光特性研究所取得的进展和结果进行了总结和评述，并对今后的发展提出了看法 Silicon-based optoelectronics is undoubtedly the future direction of the development of optoelectronics. This requires the silicon-based materials to meet the requirements of light-emitting devices, so as to achieve the purpose of optoelectronic integration. Because the silicon material has the indirect bandgap characteristic and its luminous efficiency is very low, it is a research feature in the field at home and abroad to utilize the silicon-based low-dimensional quantum structure, especially the quantum dot structure to improve the luminescent properties of the silicon-based material. In this paper, the progress and results of the research on the preparation and luminescence properties of Si-based QDs in recent years are summarized and reviewed, and the future development is proposed