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在全硅和GeSi电光强度调制器研究的基础上，提出了一种新型的电光强度调制器结构，目的在于减小调制电流和提高调制频率。
Based on the study of silicon and GeSi electro-optic intensity modulator, a novel structure of electro-optic intensity modulator is proposed to reduce the modulation current and increase the modulation frequency.